{"title":"初始应力对SiGe电容式压力传感器的影响","authors":"Jen-Chieh Li, Shin-Jin Ho, Chung-Yang Sue","doi":"10.1109/ECICE50847.2020.9302024","DOIUrl":null,"url":null,"abstract":"We proposed a design and sacrificial-based fabrication process of capacitive pressure sensor with SiGe as a structural layer and movable electrode. Simulated results showed that its sensitivity was around 15fF/bar in a full-scale span from 30 to 110kPa. The initial stress for the used materials was also discussed in this study. At a low deposition temperature of SiGe (<450°C), it is a promising and ideal candidate for post CMOS fabrication.","PeriodicalId":130143,"journal":{"name":"2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of Initial Stress on SiGe Capacitive Pressure Sensor\",\"authors\":\"Jen-Chieh Li, Shin-Jin Ho, Chung-Yang Sue\",\"doi\":\"10.1109/ECICE50847.2020.9302024\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We proposed a design and sacrificial-based fabrication process of capacitive pressure sensor with SiGe as a structural layer and movable electrode. Simulated results showed that its sensitivity was around 15fF/bar in a full-scale span from 30 to 110kPa. The initial stress for the used materials was also discussed in this study. At a low deposition temperature of SiGe (<450°C), it is a promising and ideal candidate for post CMOS fabrication.\",\"PeriodicalId\":130143,\"journal\":{\"name\":\"2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECICE50847.2020.9302024\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECICE50847.2020.9302024","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of Initial Stress on SiGe Capacitive Pressure Sensor
We proposed a design and sacrificial-based fabrication process of capacitive pressure sensor with SiGe as a structural layer and movable electrode. Simulated results showed that its sensitivity was around 15fF/bar in a full-scale span from 30 to 110kPa. The initial stress for the used materials was also discussed in this study. At a low deposition temperature of SiGe (<450°C), it is a promising and ideal candidate for post CMOS fabrication.
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