一种0.8 v低功耗低成本高频精度CMOS晶体振荡器

Yeran Jin, Bo Zhou, Yujie Liu, Jida Peng
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引用次数: 1

摘要

在65纳米CMOS中制备了一个亚1 v低复杂度晶体振荡器(XTO)。该晶体振荡器具有较低的功耗和较好的频率精度性能。晶体振荡器是基于传统的三点科尔皮茨结构。振荡器核心由一个恒定的$g_{\ mathm {m}}$增益级、一个石英晶体和两个负载电容器组成,然后是一个单端自偏置带通放大器。实验结果表明,该XTO产生了一个12mhz的参考时钟,在100 Hz偏移频率下,相位噪声为- 95 dBc/Hz,频率误差为1.2 ppm。所提出的晶体振荡器的有效面积为0.01 mm2,在0.8 v电源下的功耗为32 μ m{W}$。
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A 0.8-V Low-Power Low-Cost CMOS Crystal Oscillator with High Frequency Accuracy
A sub-1-V low-complexity crystal oscillator (XTO) is fabricated in 65-nm CMOS. The proposed crystal oscillator has lower power dissipation and better frequency accuracy performance than reported ones. The crystal oscillator is based on the conventional three-point Colpitts architecture. The oscillator core consists of a constant $g_{\mathrm{m}}$ gain stage, a quartz crystal and two load capacitors, followed by a single-ended self-biased band-passed amplifier. Experimental results show that the presented XTO generates a 12-MHz reference clock, achieving the phase noise of −95 dBc/Hz at 100-Hz offset frequency and the frequency inaccuracy of 1.2 ppm. The proposed crystal oscillator has an active area of 0.01 mm2 and the power dissipation is $32\ \mu \mathrm{W}$ from a 0.8-V supply.
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