L. Sang, Yang Zhou, J. Wu, X. Niu, Zechen Du, Hao Shi, Jialin Li, Fei Yang
{"title":"6500V/25A SiC二极管模块的电气特性和可靠性","authors":"L. Sang, Yang Zhou, J. Wu, X. Niu, Zechen Du, Hao Shi, Jialin Li, Fei Yang","doi":"10.1109/peas53589.2021.9628634","DOIUrl":null,"url":null,"abstract":"We study the electrical and reliability characteristics of 6500V/25A SiC diode module. The diode module consists of the active metal bonding (AMB) AlN substrates mounted on an AlSiC base plate. Each AMB is assembled with one 6500V/25A SiC diode single chip. We mainly study the typical static characteristics of 6500V/25A SiC diode module measured at room temperature and high temperature. The measurement results show that the on-resistance increases when the module works at higher temperature and the reverse characteristics have good high temperature stability. The switching experiments show very low reverse recovery time and reverse recovery charge. At the same time, the 6500V/25A SiC diode module has passed the 1000h HTRB, H3TRB, temperature cycling, high temperature and high humidity reliability assessments. This means that the 6500V/25A SiC diode module has good high temperature reliability and can be used for subsequent devices applications.","PeriodicalId":268264,"journal":{"name":"2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The electrical and reliability characteristics of 6500V/25A SiC diode module\",\"authors\":\"L. Sang, Yang Zhou, J. Wu, X. Niu, Zechen Du, Hao Shi, Jialin Li, Fei Yang\",\"doi\":\"10.1109/peas53589.2021.9628634\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We study the electrical and reliability characteristics of 6500V/25A SiC diode module. The diode module consists of the active metal bonding (AMB) AlN substrates mounted on an AlSiC base plate. Each AMB is assembled with one 6500V/25A SiC diode single chip. We mainly study the typical static characteristics of 6500V/25A SiC diode module measured at room temperature and high temperature. The measurement results show that the on-resistance increases when the module works at higher temperature and the reverse characteristics have good high temperature stability. The switching experiments show very low reverse recovery time and reverse recovery charge. At the same time, the 6500V/25A SiC diode module has passed the 1000h HTRB, H3TRB, temperature cycling, high temperature and high humidity reliability assessments. This means that the 6500V/25A SiC diode module has good high temperature reliability and can be used for subsequent devices applications.\",\"PeriodicalId\":268264,\"journal\":{\"name\":\"2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)\",\"volume\":\"88 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-11-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/peas53589.2021.9628634\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/peas53589.2021.9628634","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The electrical and reliability characteristics of 6500V/25A SiC diode module
We study the electrical and reliability characteristics of 6500V/25A SiC diode module. The diode module consists of the active metal bonding (AMB) AlN substrates mounted on an AlSiC base plate. Each AMB is assembled with one 6500V/25A SiC diode single chip. We mainly study the typical static characteristics of 6500V/25A SiC diode module measured at room temperature and high temperature. The measurement results show that the on-resistance increases when the module works at higher temperature and the reverse characteristics have good high temperature stability. The switching experiments show very low reverse recovery time and reverse recovery charge. At the same time, the 6500V/25A SiC diode module has passed the 1000h HTRB, H3TRB, temperature cycling, high temperature and high humidity reliability assessments. This means that the 6500V/25A SiC diode module has good high temperature reliability and can be used for subsequent devices applications.
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