M. Corsi, E. Suder, J. Tran, L. Hutter, J.P. Smith, L. Springer
{"title":"超scsi应用的9通道RS485收发器的设计和技术要求","authors":"M. Corsi, E. Suder, J. Tran, L. Hutter, J.P. Smith, L. Springer","doi":"10.1109/BIPOL.1995.493886","DOIUrl":null,"url":null,"abstract":"The design aspects of a 9-channel ultra-SCSI transceiver chip are discussed including improvements to speed, power consumption and die size over a previous generation chip, Discussion of the enabling linear BiCMOS technology and an ESD strategy, critical to the function of this class of chip, are presented. Finally, the results of prototype silicon are reviewed.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The design and technology requirements of a 9-channel RS485 transceiver for ultra-SCSI applications\",\"authors\":\"M. Corsi, E. Suder, J. Tran, L. Hutter, J.P. Smith, L. Springer\",\"doi\":\"10.1109/BIPOL.1995.493886\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design aspects of a 9-channel ultra-SCSI transceiver chip are discussed including improvements to speed, power consumption and die size over a previous generation chip, Discussion of the enabling linear BiCMOS technology and an ESD strategy, critical to the function of this class of chip, are presented. Finally, the results of prototype silicon are reviewed.\",\"PeriodicalId\":230944,\"journal\":{\"name\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1995.493886\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493886","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The design and technology requirements of a 9-channel RS485 transceiver for ultra-SCSI applications
The design aspects of a 9-channel ultra-SCSI transceiver chip are discussed including improvements to speed, power consumption and die size over a previous generation chip, Discussion of the enabling linear BiCMOS technology and an ESD strategy, critical to the function of this class of chip, are presented. Finally, the results of prototype silicon are reviewed.