研究了TiO2纳米管作为可见光活性光电极的V2O5纳米颗粒的光催化性能

U. Shaislamov, K. Mukimov, T. Akhmadjanov
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摘要

本文简要介绍了V2O5纳米粒子(NP)掺杂TiO2纳米管(NT)基光电极的光电化学性能研究结果。光电极由直径为100 nm、长度为8μm的TiO2纳米管组成,在合成电解质中采用35V电氧化法制备。通过深度包覆技术,在TiO2纳米管的壁上形成了V2O5纳米颗粒,平均尺寸为~ 5-10 nm。与原始TiO2纳米管相比,V2O5 NP掺入的TiO2纳米管在可见光区高达~ 600 nm的范围内具有优越的光吸收性能。研究发现,V2O5 NPs在TiO2 NTs中形成钒杂质,从而在TiO2 NTs中产生位于禁带隙深处的V3+离子受体水平,并提供额外的可见光吸收性能。这些杂质能级也提供了由光子激发形成的电子和空穴的快速重组位点。
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Photocatalytic performance of V2O5 nanoparticles incorporated TiO2 nanotubes as a visible-light active photoelectrodefor water splitting
Herein we demonstrate brief investigation results of photoelectrochemical performance of TiO2 nanotube (NT) based photoelectrode incorporated with V2O5 nanopaerticles (NP). Photoelectrodes were composed of TiO2 NTs with a diameter of 100 nm and length of 8μm,that were prepared by electrochemical anodization process at 35V in a formamade based electrolyte. The V2O5 nanoparticles were formed on the walls of the TiO2 NTs by deep coating technique with an average size of ∼5-10 nm. The V2O5 NP incorporated TiO2 NTs show superior light absorption properties in the visible light region up to ∼600 nm compared to the pristine TiO2NTs. It was found that V2O5 NPs formed vanadium impurities within TiO2 NTs which in its turn ceated acceptor levels of V3+ ions in the TiO2 NTs located deep in the forbidden band gap and provided additional absorption properties of visible light. These impurity levels also provide fast recombination sites of electrons and holes formed by photon excitation.
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