预测集成电路中电磁干扰引起的延迟误差:对速度饱和指数的敏感性

Xu Gao, Chunchun Sui, S. Hemmady, Joey Rivera, L. Andivahis, D. Pommerenke, D. Beetner
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引用次数: 6

摘要

集成电路(ic)有时会在其电源被外部噪声干扰时发生故障,例如可能发生在电快速瞬态(EFT)期间。在[1]中提出了一种延迟模型,该模型可用于预测由电源电压中的电磁感应噪声引起的逻辑电路延迟变化。该模型相对简单,需要的参数很少,即使在IC是“黑bos”并且关于内部电路的信息很少的情况下,也可以使用它。虽然设计信息可能通过测试近似,但可能无法获得准确结果所需的关键工艺特性。最值得关注的参数是速度饱和指数,因为该参数会以指数方式增加电源噪声对延迟的影响。本文研究了[1]中的延迟模型对速度饱和指数的敏感性。结果表明,在将大部分电路视为黑盒时发现的估计延迟对速度饱和指数不敏感。这一结果表明,即使在有限的工艺或电路信息已知的情况下,该模型也可以有效地用于电磁诱导延迟误差的预测。
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Predicting EMI induced delay errors in integrated circuits: Sensitivity to the velocity saturation index
Integrated circuits (ICs) sometimes fail when their power supply is disrupted by external noise, such as might occur during an electrical fast transient (EFT). A delay model was proposed in [1] which can be used to predict the variations in the delays through logic circuits caused by electromagnetic induced noise in the power supply voltage. This model is relatively simple and requires few parameters, giving it the potential to be used even when the IC is a “black bos” and little information is available about the inner circuits. While design information might be approximated through testing, critical process characteristics may not be available which are needed for accurate results. The parameter of greatest concern is the velocity saturation index, since this parameter can exponentially increase the impact of power supply noise on delay. This paper describes an investigation of the sensitivity of the delay model in [1] to the velocity saturation index. Results indicate that the estimated delay, found while treating much of the circuit as a black box, is largely insensitive to the velocity saturation index. This result suggests that this model can be used effectively for prediction of electromagnetically-induced delay errors, even when limited process or circuit information is known.
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