{"title":"Agilent InGaP/GaAs HBT模型提取及电路验证","authors":"Jian Han, Lingling Sun, Jun Liu, J. Wen","doi":"10.1109/ICCT.2008.4716253","DOIUrl":null,"url":null,"abstract":"Agilent HBT model parameters are extracted from the multi-finger InGaP/ GaAs HBT fabricated in 2 um process. Comparison has been made between measured and simulated data for verification purpose. With frequency range from DC to 20.05 GHz, this model is suitable for simulating InGaP/ GaAs HBT AC small -signal characterization. Using this model to verify a broadband amplifier, the result shows good agreement between simulated and measured data.","PeriodicalId":259577,"journal":{"name":"2008 11th IEEE International Conference on Communication Technology","volume":"218 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Agilent HBT model extraction and circuit verification for InGaP/GaAs HBT\",\"authors\":\"Jian Han, Lingling Sun, Jun Liu, J. Wen\",\"doi\":\"10.1109/ICCT.2008.4716253\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Agilent HBT model parameters are extracted from the multi-finger InGaP/ GaAs HBT fabricated in 2 um process. Comparison has been made between measured and simulated data for verification purpose. With frequency range from DC to 20.05 GHz, this model is suitable for simulating InGaP/ GaAs HBT AC small -signal characterization. Using this model to verify a broadband amplifier, the result shows good agreement between simulated and measured data.\",\"PeriodicalId\":259577,\"journal\":{\"name\":\"2008 11th IEEE International Conference on Communication Technology\",\"volume\":\"218 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 11th IEEE International Conference on Communication Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCT.2008.4716253\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 11th IEEE International Conference on Communication Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCT.2008.4716253","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Agilent HBT model extraction and circuit verification for InGaP/GaAs HBT
Agilent HBT model parameters are extracted from the multi-finger InGaP/ GaAs HBT fabricated in 2 um process. Comparison has been made between measured and simulated data for verification purpose. With frequency range from DC to 20.05 GHz, this model is suitable for simulating InGaP/ GaAs HBT AC small -signal characterization. Using this model to verify a broadband amplifier, the result shows good agreement between simulated and measured data.
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