Julian Cagnazzo, Osama Sam Abuomar, A. Yanguas-Gil, J. Elam
{"title":"基于卷积神经网络的原子层沉积优化","authors":"Julian Cagnazzo, Osama Sam Abuomar, A. Yanguas-Gil, J. Elam","doi":"10.1109/CSCI54926.2021.00110","DOIUrl":null,"url":null,"abstract":"Atomic layer deposition (ALD) is a chemical engineering process used to coat surfaces with a thin film. It is a versatile process able to deposit a wide range of films using different chemical reagents. When developing novel ALD processes, a technician must determine the dosing time of each reagent. To accelerate this development process, we trained convolutional neural networks to predict the reagent saturation times of novel ALD reactions given the reagent dosing times and film growth rates of example reactions. We generated two kinds of models. Single reaction models made predictions based on a single example ALD reaction. Multiple reaction models made predictions based on ten example reactions using the same reagents with different dosing times.","PeriodicalId":206881,"journal":{"name":"2021 International Conference on Computational Science and Computational Intelligence (CSCI)","volume":"162 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Atomic Layer Deposition Optimization Using Convolutional Neural Networks\",\"authors\":\"Julian Cagnazzo, Osama Sam Abuomar, A. Yanguas-Gil, J. Elam\",\"doi\":\"10.1109/CSCI54926.2021.00110\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Atomic layer deposition (ALD) is a chemical engineering process used to coat surfaces with a thin film. It is a versatile process able to deposit a wide range of films using different chemical reagents. When developing novel ALD processes, a technician must determine the dosing time of each reagent. To accelerate this development process, we trained convolutional neural networks to predict the reagent saturation times of novel ALD reactions given the reagent dosing times and film growth rates of example reactions. We generated two kinds of models. Single reaction models made predictions based on a single example ALD reaction. Multiple reaction models made predictions based on ten example reactions using the same reagents with different dosing times.\",\"PeriodicalId\":206881,\"journal\":{\"name\":\"2021 International Conference on Computational Science and Computational Intelligence (CSCI)\",\"volume\":\"162 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Conference on Computational Science and Computational Intelligence (CSCI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSCI54926.2021.00110\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on Computational Science and Computational Intelligence (CSCI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSCI54926.2021.00110","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Atomic Layer Deposition Optimization Using Convolutional Neural Networks
Atomic layer deposition (ALD) is a chemical engineering process used to coat surfaces with a thin film. It is a versatile process able to deposit a wide range of films using different chemical reagents. When developing novel ALD processes, a technician must determine the dosing time of each reagent. To accelerate this development process, we trained convolutional neural networks to predict the reagent saturation times of novel ALD reactions given the reagent dosing times and film growth rates of example reactions. We generated two kinds of models. Single reaction models made predictions based on a single example ALD reaction. Multiple reaction models made predictions based on ten example reactions using the same reagents with different dosing times.