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Akademie-Verlag, Berlin. 1971–1972. Katalog, Nachtrag 1 Pub Date : 1971-12-31 DOI:10.1515/9783112579022-004

J. Oller, Albert Satorra, A. Tobeña

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摘要

采用新型的喷雾热解方法在n型硅片上制备了2000 A的diiti氧化铝薄膜。喷雾溶液中含有乙酰丙酮铝配合物，用NIMR技术对其进行了表征。制备的AP,203’薄膜均匀、致密，击穿电位大于10v

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Diti Alumina thin films of 2000 A were deposited on n-type I silicon wafers by a novel spray pyrolysis method. The spray solution contained an aluminum acetylacetonato complex which was characterized by NIMR techniques. The deposited films of AP,203' were homogeneous, uniform, dense and had breakdown potentials of greater than 10 v. MATERIALS

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