{"title":"基于CMOS技术的数字阵列雷达1 ~ 4GHz三向射频放大器","authors":"Bowen Wu, Zongming Duan, Yan Wang, Wei Lv","doi":"10.1109/ICICM50929.2020.9292302","DOIUrl":null,"url":null,"abstract":"This paper presents A 1 to 4 GHz tri-directional RF amplifier based on 0.18um technology for digital array radar applications. A wideband matching from 1 to 4 GHz at RF port is achieved while the circuit is working in both TX and RX mode. The circuits consist of a variable gain low noise amplifier, a drive amplifier and a single pole double throw switch. The circuit shows gain from 7.6 to 14.2 dB, and the noise figure is less than 5.3 dB with −3dBm@2.4GHz input P-1dB compression point in RX, while gain of 9.9dB and output P-1dB compression point is 11.4dBm@2.4GHz in TX. The chip size is 2.25mm*0.97mm (with pads).","PeriodicalId":364285,"journal":{"name":"2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 1∼4GHz Tri-Directional RF Amplifier Based on CMOS Technology for Digital Array Radars\",\"authors\":\"Bowen Wu, Zongming Duan, Yan Wang, Wei Lv\",\"doi\":\"10.1109/ICICM50929.2020.9292302\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents A 1 to 4 GHz tri-directional RF amplifier based on 0.18um technology for digital array radar applications. A wideband matching from 1 to 4 GHz at RF port is achieved while the circuit is working in both TX and RX mode. The circuits consist of a variable gain low noise amplifier, a drive amplifier and a single pole double throw switch. The circuit shows gain from 7.6 to 14.2 dB, and the noise figure is less than 5.3 dB with −3dBm@2.4GHz input P-1dB compression point in RX, while gain of 9.9dB and output P-1dB compression point is 11.4dBm@2.4GHz in TX. The chip size is 2.25mm*0.97mm (with pads).\",\"PeriodicalId\":364285,\"journal\":{\"name\":\"2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICM50929.2020.9292302\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICM50929.2020.9292302","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1∼4GHz Tri-Directional RF Amplifier Based on CMOS Technology for Digital Array Radars
This paper presents A 1 to 4 GHz tri-directional RF amplifier based on 0.18um technology for digital array radar applications. A wideband matching from 1 to 4 GHz at RF port is achieved while the circuit is working in both TX and RX mode. The circuits consist of a variable gain low noise amplifier, a drive amplifier and a single pole double throw switch. The circuit shows gain from 7.6 to 14.2 dB, and the noise figure is less than 5.3 dB with −3dBm@2.4GHz input P-1dB compression point in RX, while gain of 9.9dB and output P-1dB compression point is 11.4dBm@2.4GHz in TX. The chip size is 2.25mm*0.97mm (with pads).
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
