磷扩散膏在P- si衬底上制备N+/P结硅太阳电池发射体的电流电压特性研究

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI:10.1109/PVSC.2011.6186384

Jin‐Sung Kim, Kyungwon Moon, Kyu-Sang Shin, M. Jung, Chel-Jong Choi

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引用次数: 2

摘要

本文研究了在p- si衬底上用扩散磷膏形成n+发射极结的n+/p结太阳能电池的电流电压特性。退火在不同的环境下进行。在O2环境中退火的二极管的整流性能最好，而在Ar环境中退火的二极管的整流性能最差，整流性能随流量的增加而降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Investigation of the current-voltage characteristics of N+/P junction silicon solar cell emitters formed by phosphorus diffusion paste on P-Si substrate

We have investigated the current-voltage characteristics of n+/p junction solar cells formed on p-Si substrate with n+ emitter junction formed by diffusion phosphorus paste by means of furnace annealing. The annealing has been carried out in different ambients. The diode annealed in O2 ambient showed the best rectifying behavior while the diode annealed in Ar showed the least with degradation of rectifying behavior with increase of flow rate.

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2011 37th IEEE Photovoltaic Specialists Conference

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