外延Fe/GaAs(001)界面化学键控制Fe/X自旋电子多层中太赫兹的产生

2021 Conference on Lasers and Electro-Optics (CLEO) Pub Date : 2021-05-01 DOI:10.1364/cleo_si.2021.sw3k.6

R. Adam, Genyu Chen, D. Bürgler, D. Cao, S. Heidtfeld, D. Chakraborty, Jing Cheng, I. Komissarov, H. Hardtdegen, M. Mikulics, C. Schneider, R. Sobolewski

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摘要

我们报告了在GaAs上生长的Fe/X自旋电子发射体中对太赫兹瞬态的额外控制程度(001)。我们将太赫兹振幅的场无关增强归因于外延Fe/GaAs(001)界面上的特定化学键合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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THz Generation Control in Fe/X Spintronic Multilayers by chemical bonding at epitaxial Fe/GaAs(001) interfaces

We report an additional degree of control of THz transients in Fe/X spintronic emitters grown on GaAs(001). We ascribe the field-independent enhancement of the THz amplitude to specific chemical bonding at the epitaxial Fe/GaAs(001) interface.

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2021 Conference on Lasers and Electro-Optics (CLEO)

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