{"title":"Co-60射线辐照MOS电容器的介电和导电性能","authors":"B. Ryu, K. Lim, S. Kwon, J.H. Lee, B. Kim","doi":"10.1109/ICPADM.1994.413983","DOIUrl":null,"url":null,"abstract":"When metal-oxide-semiconductor (MOS) device is exposed to radiation, the resultant effects can cause the modulation and/or degradation in device characteristics and its operating life. In this paper, the irradiation effects on MOS structure were investigated by the measurements of C-V, D-V, and I-V characteristics. From the experimental results, it is confirmed that the peak of dissipation factor is due to the interaction between majority carriers and interface states which induced by radiation. We also found that the measurements of dissipation factor could be very useful method as the evaluation tool of irradiation effects in MOS structure. The I-V characteristics could be explained by traps in the oxide created by radiation, and charges trapped at interface of Si-SiO/sub 2/.<<ETX>>","PeriodicalId":331058,"journal":{"name":"Proceedings of 1994 4th International Conference on Properties and Applications of Dielectric Materials (ICPADM)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dielectric and conduction properties in MOS capacitor irradiated under Co-60 gamma ray\",\"authors\":\"B. Ryu, K. Lim, S. Kwon, J.H. Lee, B. Kim\",\"doi\":\"10.1109/ICPADM.1994.413983\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"When metal-oxide-semiconductor (MOS) device is exposed to radiation, the resultant effects can cause the modulation and/or degradation in device characteristics and its operating life. In this paper, the irradiation effects on MOS structure were investigated by the measurements of C-V, D-V, and I-V characteristics. From the experimental results, it is confirmed that the peak of dissipation factor is due to the interaction between majority carriers and interface states which induced by radiation. We also found that the measurements of dissipation factor could be very useful method as the evaluation tool of irradiation effects in MOS structure. The I-V characteristics could be explained by traps in the oxide created by radiation, and charges trapped at interface of Si-SiO/sub 2/.<<ETX>>\",\"PeriodicalId\":331058,\"journal\":{\"name\":\"Proceedings of 1994 4th International Conference on Properties and Applications of Dielectric Materials (ICPADM)\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 4th International Conference on Properties and Applications of Dielectric Materials (ICPADM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICPADM.1994.413983\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 4th International Conference on Properties and Applications of Dielectric Materials (ICPADM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICPADM.1994.413983","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dielectric and conduction properties in MOS capacitor irradiated under Co-60 gamma ray
When metal-oxide-semiconductor (MOS) device is exposed to radiation, the resultant effects can cause the modulation and/or degradation in device characteristics and its operating life. In this paper, the irradiation effects on MOS structure were investigated by the measurements of C-V, D-V, and I-V characteristics. From the experimental results, it is confirmed that the peak of dissipation factor is due to the interaction between majority carriers and interface states which induced by radiation. We also found that the measurements of dissipation factor could be very useful method as the evaluation tool of irradiation effects in MOS structure. The I-V characteristics could be explained by traps in the oxide created by radiation, and charges trapped at interface of Si-SiO/sub 2/.<>
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