{"title":"UV 400光刻中接触方式对分辨率的影响","authors":"K. Indykiewicz, W. Macherzyński, R. Paszkiewicz","doi":"10.1109/STYSW.2011.6155843","DOIUrl":null,"url":null,"abstract":"Optical lithography is the most popular lithographic technique in modern semiconductor manufacture. High pattern resolution is very desirable parameter in many devices. Because of that different contact methods were investigated. In the article we present influence of contact modes between the mask and the sample on pattern resolution. We defined the maximal resolution of test structures obtained for various distances of proximity contacts in optical lithography process.","PeriodicalId":261643,"journal":{"name":"2011 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The influence of contact mode on resolution in UV 400 lithography\",\"authors\":\"K. Indykiewicz, W. Macherzyński, R. Paszkiewicz\",\"doi\":\"10.1109/STYSW.2011.6155843\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Optical lithography is the most popular lithographic technique in modern semiconductor manufacture. High pattern resolution is very desirable parameter in many devices. Because of that different contact methods were investigated. In the article we present influence of contact modes between the mask and the sample on pattern resolution. We defined the maximal resolution of test structures obtained for various distances of proximity contacts in optical lithography process.\",\"PeriodicalId\":261643,\"journal\":{\"name\":\"2011 International Students and Young Scientists Workshop \\\"Photonics and Microsystems\\\"\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-07-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Students and Young Scientists Workshop \\\"Photonics and Microsystems\\\"\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/STYSW.2011.6155843\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/STYSW.2011.6155843","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The influence of contact mode on resolution in UV 400 lithography
Optical lithography is the most popular lithographic technique in modern semiconductor manufacture. High pattern resolution is very desirable parameter in many devices. Because of that different contact methods were investigated. In the article we present influence of contact modes between the mask and the sample on pattern resolution. We defined the maximal resolution of test structures obtained for various distances of proximity contacts in optical lithography process.
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