{"title":"脉冲偏置条件下mesfet的瞬时S参数测量","authors":"M. Begin, F. Ghannouchi, L. Selmi, B. Riccò","doi":"10.1109/IMTC.1994.351974","DOIUrl":null,"url":null,"abstract":"An innovative six-port network analyzer (SPNA) for characterizing GaAs MESFETs under pulsed bias and RF conditions is presented in this paper. This SPNA allows the measurements of instantaneous S parameters of microwave active devices. These S parameters may then be used to extract the electrical model elements (Cgs, Cgd, Gds, Gm, etc.) of the MESFET using standard procedures. This system is particularly suitable for studying trapping and self-heating effects in GaAs devices.<<ETX>>","PeriodicalId":231484,"journal":{"name":"Conference Proceedings. 10th Anniversary. IMTC/94. Advanced Technologies in I & M. 1994 IEEE Instrumentation and Measurement Technolgy Conference (Cat. No.94CH3424-9)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Instantaneous S parameters measurements of MESFETs under burst bias conditions\",\"authors\":\"M. Begin, F. Ghannouchi, L. Selmi, B. Riccò\",\"doi\":\"10.1109/IMTC.1994.351974\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An innovative six-port network analyzer (SPNA) for characterizing GaAs MESFETs under pulsed bias and RF conditions is presented in this paper. This SPNA allows the measurements of instantaneous S parameters of microwave active devices. These S parameters may then be used to extract the electrical model elements (Cgs, Cgd, Gds, Gm, etc.) of the MESFET using standard procedures. This system is particularly suitable for studying trapping and self-heating effects in GaAs devices.<<ETX>>\",\"PeriodicalId\":231484,\"journal\":{\"name\":\"Conference Proceedings. 10th Anniversary. IMTC/94. Advanced Technologies in I & M. 1994 IEEE Instrumentation and Measurement Technolgy Conference (Cat. No.94CH3424-9)\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-05-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. 10th Anniversary. IMTC/94. Advanced Technologies in I & M. 1994 IEEE Instrumentation and Measurement Technolgy Conference (Cat. No.94CH3424-9)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMTC.1994.351974\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 10th Anniversary. IMTC/94. Advanced Technologies in I & M. 1994 IEEE Instrumentation and Measurement Technolgy Conference (Cat. No.94CH3424-9)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMTC.1994.351974","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Instantaneous S parameters measurements of MESFETs under burst bias conditions
An innovative six-port network analyzer (SPNA) for characterizing GaAs MESFETs under pulsed bias and RF conditions is presented in this paper. This SPNA allows the measurements of instantaneous S parameters of microwave active devices. These S parameters may then be used to extract the electrical model elements (Cgs, Cgd, Gds, Gm, etc.) of the MESFET using standard procedures. This system is particularly suitable for studying trapping and self-heating effects in GaAs devices.<>
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