亚纳秒ISL技术在400 mil ×400mil VLSI芯片

{"title":"亚纳秒ISL技术在400 mil ×400mil VLSI芯片","authors":"D. Lamb, P. Roberts, R. Belt, D. Bostick, H. Stevens, S. Pai, D. Burbank","doi":"10.1109/IEDM.1980.189971","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"185 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A sub-nanosecond ISL technology demonstrated in a 400 mil × 400 mil VLSI chip\",\"authors\":\"D. Lamb, P. Roberts, R. Belt, D. Bostick, H. Stevens, S. Pai, D. Burbank\",\"doi\":\"10.1109/IEDM.1980.189971\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":180541,\"journal\":{\"name\":\"1980 International Electron Devices Meeting\",\"volume\":\"185 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1980 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1980.189971\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189971","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}