{"title":"用于毫米波信号生成的片上有源七倍频(x波段到w波段)","authors":"Firass Mustafa, E. Halpern, E. Socher","doi":"10.1109/COMCAS.2015.7360432","DOIUrl":null,"url":null,"abstract":"This paper discusses an active on-chip multiplier for mm-wave generation, implemented in CMOS 65nm TSMC technology. The multiplying is done within single stage, which is connected via wire bonds to 4 stage PA, reducing the DC power consumption to 360 mW, 80 mW for the multiplying stage and 280 mW for the PA. Total core silicon area of 0.92 mm2, 0.31 mm2 the multiplier area and 0.61 mm2 the PA area. Achieving Psat of 6 dBm at 82 GHz.","PeriodicalId":431569,"journal":{"name":"2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An on-chip active frequency multiplier-by-seven (X-band to W-band) for millimeter-wave signal generation\",\"authors\":\"Firass Mustafa, E. Halpern, E. Socher\",\"doi\":\"10.1109/COMCAS.2015.7360432\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses an active on-chip multiplier for mm-wave generation, implemented in CMOS 65nm TSMC technology. The multiplying is done within single stage, which is connected via wire bonds to 4 stage PA, reducing the DC power consumption to 360 mW, 80 mW for the multiplying stage and 280 mW for the PA. Total core silicon area of 0.92 mm2, 0.31 mm2 the multiplier area and 0.61 mm2 the PA area. Achieving Psat of 6 dBm at 82 GHz.\",\"PeriodicalId\":431569,\"journal\":{\"name\":\"2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)\",\"volume\":\"124 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMCAS.2015.7360432\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMCAS.2015.7360432","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An on-chip active frequency multiplier-by-seven (X-band to W-band) for millimeter-wave signal generation
This paper discusses an active on-chip multiplier for mm-wave generation, implemented in CMOS 65nm TSMC technology. The multiplying is done within single stage, which is connected via wire bonds to 4 stage PA, reducing the DC power consumption to 360 mW, 80 mW for the multiplying stage and 280 mW for the PA. Total core silicon area of 0.92 mm2, 0.31 mm2 the multiplier area and 0.61 mm2 the PA area. Achieving Psat of 6 dBm at 82 GHz.
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