Md. Nabil-Al-Rafiq, Syed Ishmam Ahmad, M. Mamun, C. A. Hossain
{"title":"基于功率、电流和延迟信息的翅片场效应晶体管电路故障分析","authors":"Md. Nabil-Al-Rafiq, Syed Ishmam Ahmad, M. Mamun, C. A. Hossain","doi":"10.1109/ICREST.2019.8644399","DOIUrl":null,"url":null,"abstract":"Fin field effect transistors (FinFETs) are predicted to be supplant planar CMOS field effect transistors (FETs) in the upcoming generation because of their exceptional electrical characteristics. This paper provides a fault analysis for FinFET based circuits by observing average power, average current, branch current and delay of the circuit. We observed significant changes in the faulty circuit in terms of power, delay and current, which we compared with the fault-free circuit. All the consequences of the faulty cases and the fault-free cases were tabulated and distinguished.","PeriodicalId":108842,"journal":{"name":"2019 International Conference on Robotics,Electrical and Signal Processing Techniques (ICREST)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fin Field-Effect Transistor Circuit Fault Analysis Using Power, Current and Delay Information\",\"authors\":\"Md. Nabil-Al-Rafiq, Syed Ishmam Ahmad, M. Mamun, C. A. Hossain\",\"doi\":\"10.1109/ICREST.2019.8644399\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Fin field effect transistors (FinFETs) are predicted to be supplant planar CMOS field effect transistors (FETs) in the upcoming generation because of their exceptional electrical characteristics. This paper provides a fault analysis for FinFET based circuits by observing average power, average current, branch current and delay of the circuit. We observed significant changes in the faulty circuit in terms of power, delay and current, which we compared with the fault-free circuit. All the consequences of the faulty cases and the fault-free cases were tabulated and distinguished.\",\"PeriodicalId\":108842,\"journal\":{\"name\":\"2019 International Conference on Robotics,Electrical and Signal Processing Techniques (ICREST)\",\"volume\":\"104 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Robotics,Electrical and Signal Processing Techniques (ICREST)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICREST.2019.8644399\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Robotics,Electrical and Signal Processing Techniques (ICREST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICREST.2019.8644399","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fin Field-Effect Transistor Circuit Fault Analysis Using Power, Current and Delay Information
Fin field effect transistors (FinFETs) are predicted to be supplant planar CMOS field effect transistors (FETs) in the upcoming generation because of their exceptional electrical characteristics. This paper provides a fault analysis for FinFET based circuits by observing average power, average current, branch current and delay of the circuit. We observed significant changes in the faulty circuit in terms of power, delay and current, which we compared with the fault-free circuit. All the consequences of the faulty cases and the fault-free cases were tabulated and distinguished.