III-V型HBT紧凑型建模的当前趋势与挑战

2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI:10.1109/EMICC.2008.4772283

M. Rudolph

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引用次数: 3

摘要

本文综述了近年来基于GaAs或InP的HBTs建模方面的研究成果。重点是弱非线性行为的描述，以及非线性模拟中1/f和散粒噪声的高级描述。尽管紧凑的HBT建模已经达到了很高的精度水平，但仍然存在一些限制，这些限制也将得到解决。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Current Trends and Challenges in III-V HBT Compact Modeling

This paper gives an overview on recent achievements in the modeling of GaAs or InP based HBTs. The emphasis lies on the description of weakly nonlinear behavior, and on advanced descriptions for 1/f and shot noise for nonlinear simulation. Although compact HBT modeling already reached a high level of accuracy, certain limitations remain that will also be addressed.

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2008 European Microwave Integrated Circuit Conference

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