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引用次数: 1

摘要

基于场效应晶体管(FET)或双极结晶体管(BJT)的电路,涉及任何一般阻抗的发射极/源变性,因其对电路性能的积极影响而广为人知。这种电路的输入输出阻抗、跨导纳、电压和功率增益等特性是众所周知的。在本文中,我们建议通过将其视为局部串联-串联反馈来分析拓扑。在射频CMOS 0.18 μm TowerJazz商用工艺上验证了该方法的有效性。该方法基于负反馈分析,说明了在模拟和微波电路中使用源退化的优点。
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Source degeneration as series-series feedback
Field effect transistor (FET) or bipolar junction transistor (BJT) based circuits, involving emitter/source degeneration by any general impedance are widely known for their positive effects on circuit performance. The circuit's behavior like input-output impedances, trans-admittance, voltage and power gains of such topologies are well known. In this paper, we propose to analyze the topology by looking at it as a local series-series feedback. The validity of the approach is demonstrated on RF CMOS 0.18 μm TowerJazz commercial process. This method, based on the negative feedback analysis, gives an instructive insight on the advantages of using source degeneration in analog and microwave circuits.
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