acorad公司5mm厚CdTe探测器的评估

A. Garson, I. Jung, J. Perkins, H. Krawczynski
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引用次数: 3

摘要

使用acorad公司的2/spl倍/2/spl倍/0.5 cm/sup / 3/碲化镉(CdTe)衬底,我们制造了具有平面阴极触点和8/spl倍/8阳极像素的探测器。我们研究了不同接触材料和表面处理下探测器的I-V特性和能量分辨率。在使探测器偏置一段时间后,暗电流急剧增加。我们的研究表明,较高的探测器温度和较高的施加偏置电压会减少击穿前的时间。当我们在沉积In触点之前将探测器加热到90/spl℃30分钟时,我们获得了Pt阴极触点和In阳极像素的最佳结果。用662 keV的x射线照射探测器,测量了脉冲长度分布,得到了电子迁移率为/spl sim/860 cm/sup 2/ V/sup -1/s/sup -1/。我们表明,通过校正阳极信号的初级相互作用深度,可以提高能量分辨率。工作温度为-40/spl℃,阴极偏置电压为-500 V,在122 keV和662 keV时,最佳像素的全宽半最大值(FWHM)能量分辨率分别为8 keV(6.4%)和23 keV(3.4%)。
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Evaluation of 5 mm-thick CdTe detectors from the company Acrorad
Using 2/spl times/2/spl times/0.5 cm/sup 3/ cadmium telluride (CdTe) substrates from the company Acrorad, we have fabricated detectors with planar cathode contacts and 8/spl times/8 anode pixels. We investigate the I-V characteristics and energy resolution of the detectors for different contact materials and surface treatments. After biasing the detectors for a certain time, the dark currents increase dramatically. Our studies show that the time before breakdown decreases for higher detector temperatures and for higher applied bias voltages. We obtained the best results with a Pt cathode contact and In anode pixels when we heat the detector to 90/spl deg/C for 30 minutes prior to depositing the In contacts. Flood-illuminating the detector with 662 keV X-rays, we measured the pulse length distribution and derived an electron mobility of /spl sim/860 cm/sup 2/ V/sup -1/s/sup -1/. We show that the energy resolution can be improved by correcting the anode signals for the depth of the primary interaction. Operated at a temperature of -40/spl deg/C and a cathode bias voltage of -500 V, the best pixels of the best detector achieved full width half maximum (FWHM) energy resolutions of 8 keV (6.4%) and 23 keV (3.4%) at 122 keV and 662 keV, respectively.
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