P. Schuh, H. Sledzik, R. Reber, A. Fleckenstein, R. Leberer, M. Oppermann, R. Quay, F. van Raay, M. Seelmann-Eggebert, R. Kiefer, M. Mikulla
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引用次数: 45
摘要
未来有源阵列天线中下一代T/ r模块的放大器是基于新型AlGaN/GaN HEMT结构的单片集成电路(MMIC)。低噪声和功率放大器都是为x波段频率设计的。采用新颖的过孔微带技术设计、模拟和制造了mmic。驱动放大器(DA)的输出功率为6.8 W (38 dBm)，高功率放大器(HPA)的输出功率为20 W (43 dBm)。低噪声放大器(LNA)的实测噪声系数在1.5 dB范围内。基于多层LTCC技术，设计了搭载GaN mmic的T/ r模块前端。
GaN MMIC based T/R-Module Front-End for X-Band Applications
Amplifiers for a next generation of T/R-modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the bases of novel AlGaN/GaN HEMT structures. Both, low noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high power amplifier (HPA) are measured. The measured noise figure of the low noise amplifier (LNA) is in the range of 1.5 dB. A T/R-module front-end with mounted GaN MMICs is designed based on a multilayer LTCC technology.
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