{"title":"掺铒多层多孔硅微腔的光发射","authors":"Y. Zhou, P. A. Snow, P. Russell","doi":"10.1109/CLEOE.2000.910088","DOIUrl":null,"url":null,"abstract":"Summary form only given. There is substantial interest in obtaining light emission in silicon at wavelengths away from 750 nm porous silicon (p-Si) emission band. Erbium ions, incorporated into sponge-like structure of p-Si, can produce light emission at 1540 nm. We report for the first time light emission from a multilayer porous silicon microcavity, into which the Er-ions were doped electrochemically as luminescence centres.","PeriodicalId":250878,"journal":{"name":"Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Light emission from erbium-doped multilayer porous silicon microcavity\",\"authors\":\"Y. Zhou, P. A. Snow, P. Russell\",\"doi\":\"10.1109/CLEOE.2000.910088\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. There is substantial interest in obtaining light emission in silicon at wavelengths away from 750 nm porous silicon (p-Si) emission band. Erbium ions, incorporated into sponge-like structure of p-Si, can produce light emission at 1540 nm. We report for the first time light emission from a multilayer porous silicon microcavity, into which the Er-ions were doped electrochemically as luminescence centres.\",\"PeriodicalId\":250878,\"journal\":{\"name\":\"Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505)\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CLEOE.2000.910088\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEOE.2000.910088","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Light emission from erbium-doped multilayer porous silicon microcavity
Summary form only given. There is substantial interest in obtaining light emission in silicon at wavelengths away from 750 nm porous silicon (p-Si) emission band. Erbium ions, incorporated into sponge-like structure of p-Si, can produce light emission at 1540 nm. We report for the first time light emission from a multilayer porous silicon microcavity, into which the Er-ions were doped electrochemically as luminescence centres.
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