一种用于量子控制和读出的1.2 v 6ghz双路电荷泵锁相环频率合成器

V. Manthena, S. Miryala, G. Deptuch, G. Carini
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引用次数: 1

摘要

本文提出了一种低抖动双路电荷泵锁相环合成器(PLL)在65纳米CMOS工艺的量子读出应用。锁相环包含一个可编程的双电荷泵和一个环路滤波器,具有比例和积分路径,可以独立驱动,提供灵活的环路带宽控制,以实现低抖动性能。该设计在300 K下实现,并根据表征结果分析了77 K下的压控振荡器(VCO)和电荷泵(CP)等关键模块。LC-VCO采用5位粗控制的c类NMOS结构实现,正交信号由多相滤波器产生。该VCO的调谐范围为1 GHz,中心频率为6 GHz, 300 K和77 K温度下1MHz偏移时相位噪声分别为-123 dBc/Hz和-132 dBc/Hz。仿真的锁相环有效值抖动在6 GHz时为125 fs,在1.2 V电源下功耗为8 mW。
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A 1.2-V 6-GHz Dual-Path Charge-Pump PLL Frequency Synthesizer for Quantum Control and Readout in CMOS 65-nm Process
This paper presents a low jitter dual-path charge-pump phase locked loop (PLL) synthesizer in a CMOS 65-nm process for quantum readout applications. The PLL incorporates a programmable dual charge-pump and a loop filter with both proportional and integral paths that can be driven independently providing flexible control of the loop bandwidth to achieve low jitter performance. The design is implemented at 300 K and critical blocks like voltage-controlled oscillator (VCO) and charge-pump (CP) are analyzed at 77 K based on the characterized results. The LC-VCO is realized with the class-C NMOS only architecture with 5-bit coarse control and quadrature signals are generated with poly phase filter. The VCO is designed with the tuning range of 1 GHz around the center frequency of 6 GHz with Phase Noise of -123 dBc/Hz and -132 dBc/Hz at 1MHz offset at 300 K and 77 K temperature. The simulated PLL rms jitter is 125 fs at 6 GHz with a power consumption of 8 mW at the 1.2 V power supply.
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