单事件影响作为IT基础设施的可靠性问题

E. Ibe, H. Kameyama, Y. Yahagi, H. Yamaguchi
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引用次数: 7

摘要

地面中子被认为是单事件效应(SEEs)的主要来源,包括半导体器件在地面的软误差。随着半导体器件的规模急剧下降到100nm以下,单事件效应可能对需要大量电子器件的IT系统造成的威胁显然越来越大。然而,据报道,see的模式在每年的基础上是不同的,因此,即使在设备层面上,量化这种影响的方法也变得越来越复杂。本文综述了中子诱导电子束的研究现状,并提出了基准研究,以明确电子束对IT基础设施可靠性的影响。
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Single event effects as a reliability issue of IT infrastructure
Terrestrial neutron is being recognized as a major source of single event effects (SEEs) including soft-error of semi-conductor devices at the ground level. As semiconductor device scaling nose-dives into sub 100nm, the possible threat from single event effects is apparently growing onto IT systems that require a great number of electron devices. The modes of SEEs, however, are reportedly diverging on annual base and thus methods to quantify such effects are getting more and more complicated even for device level. In the present paper, current situation on neutron-induced SEEs are reviewed and benchmark studies are proposed to make the effects of SEEs on the reliability of IT infrastructure clear.
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