{"title":"一种在SiO2衬底上具有金属条的硅波导偏振变换器","authors":"J. Yamauchi, Yuta Rikihisa, H. Nakano","doi":"10.1109/NUSOD.2016.7547027","DOIUrl":null,"url":null,"abstract":"A polarization converter consisting of a silicon waveguide is analyzed by the imaginary-distance beam propagation method based on Yee's mesh and the finite-difference time-domain method. It is revealed at a wavelength of 1.55 μm that the polarization conversion length is 15.1 iμm with an insertion loss of 0.47 dB. An extinction ratio of more than 20 dB is obtained over a wavelength range of 1.53 to 1.57μm.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A silicon-waveguide polarization converter with a metal strip on an SiO2 substrate\",\"authors\":\"J. Yamauchi, Yuta Rikihisa, H. Nakano\",\"doi\":\"10.1109/NUSOD.2016.7547027\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A polarization converter consisting of a silicon waveguide is analyzed by the imaginary-distance beam propagation method based on Yee's mesh and the finite-difference time-domain method. It is revealed at a wavelength of 1.55 μm that the polarization conversion length is 15.1 iμm with an insertion loss of 0.47 dB. An extinction ratio of more than 20 dB is obtained over a wavelength range of 1.53 to 1.57μm.\",\"PeriodicalId\":425705,\"journal\":{\"name\":\"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"137 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2016.7547027\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2016.7547027","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A silicon-waveguide polarization converter with a metal strip on an SiO2 substrate
A polarization converter consisting of a silicon waveguide is analyzed by the imaginary-distance beam propagation method based on Yee's mesh and the finite-difference time-domain method. It is revealed at a wavelength of 1.55 μm that the polarization conversion length is 15.1 iμm with an insertion loss of 0.47 dB. An extinction ratio of more than 20 dB is obtained over a wavelength range of 1.53 to 1.57μm.
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