基于有限元分析的TSV热力可靠性研究

Fangchao Huang, Zhengwei Fan, Xun Chen, Yao Liu, Shufeng Zhang, Yashun Wang, Yu Jiang
{"title":"基于有限元分析的TSV热力可靠性研究","authors":"Fangchao Huang, Zhengwei Fan, Xun Chen, Yao Liu, Shufeng Zhang, Yashun Wang, Yu Jiang","doi":"10.1109/phm-qingdao46334.2019.8942816","DOIUrl":null,"url":null,"abstract":"Three-dimensional integrated packaging technology is recognized as the fourth generation packaging technology with the hope of breaking Moore's law. And through silicon via(TSV) technology is the key of three-dimensional packaging technology. In order to study the thermal-mechanical reliability of TSV structure, the finite element method was used to simulate the equivalent stress and deformation of TSV with different TSV size, aspect ratio, pitch and structure. The distribution of equivalent stress and deformation was obtained. The simulation results showed that the increase of TSV size would lead to the increase of equivalent stress and deformation, the aspect ratio of TSV would only affect deformation, and the increase of TSV pitch would lead to the decrease of equivalent stress and the increase of deformation. In addition, TSV filled with parylene was analyzed in this paper. The stress could be effectively released by increasing the size of parylene.","PeriodicalId":259179,"journal":{"name":"2019 Prognostics and System Health Management Conference (PHM-Qingdao)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Research on TSV Thermal-mechanical Reliability Based on Finite Element Analysis\",\"authors\":\"Fangchao Huang, Zhengwei Fan, Xun Chen, Yao Liu, Shufeng Zhang, Yashun Wang, Yu Jiang\",\"doi\":\"10.1109/phm-qingdao46334.2019.8942816\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Three-dimensional integrated packaging technology is recognized as the fourth generation packaging technology with the hope of breaking Moore's law. And through silicon via(TSV) technology is the key of three-dimensional packaging technology. In order to study the thermal-mechanical reliability of TSV structure, the finite element method was used to simulate the equivalent stress and deformation of TSV with different TSV size, aspect ratio, pitch and structure. The distribution of equivalent stress and deformation was obtained. The simulation results showed that the increase of TSV size would lead to the increase of equivalent stress and deformation, the aspect ratio of TSV would only affect deformation, and the increase of TSV pitch would lead to the decrease of equivalent stress and the increase of deformation. In addition, TSV filled with parylene was analyzed in this paper. The stress could be effectively released by increasing the size of parylene.\",\"PeriodicalId\":259179,\"journal\":{\"name\":\"2019 Prognostics and System Health Management Conference (PHM-Qingdao)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Prognostics and System Health Management Conference (PHM-Qingdao)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/phm-qingdao46334.2019.8942816\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Prognostics and System Health Management Conference (PHM-Qingdao)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/phm-qingdao46334.2019.8942816","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

三维集成封装技术被认为是有望打破摩尔定律的第四代封装技术。而透硅通孔(TSV)技术是三维封装技术的关键。为了研究TSV结构的热-机械可靠性,采用有限元法对不同TSV尺寸、纵横比、节距和结构的TSV进行等效应力和等效变形模拟。得到了等效应力和等效变形的分布。仿真结果表明,TSV尺寸的增加会导致等效应力和变形的增加,TSV的宽高比只会影响变形,TSV节距的增加会导致等效应力的减小和变形的增加。此外,本文还对聚对二甲苯填充的TSV进行了分析。增大聚对二甲苯的尺寸可以有效地释放应力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Research on TSV Thermal-mechanical Reliability Based on Finite Element Analysis
Three-dimensional integrated packaging technology is recognized as the fourth generation packaging technology with the hope of breaking Moore's law. And through silicon via(TSV) technology is the key of three-dimensional packaging technology. In order to study the thermal-mechanical reliability of TSV structure, the finite element method was used to simulate the equivalent stress and deformation of TSV with different TSV size, aspect ratio, pitch and structure. The distribution of equivalent stress and deformation was obtained. The simulation results showed that the increase of TSV size would lead to the increase of equivalent stress and deformation, the aspect ratio of TSV would only affect deformation, and the increase of TSV pitch would lead to the decrease of equivalent stress and the increase of deformation. In addition, TSV filled with parylene was analyzed in this paper. The stress could be effectively released by increasing the size of parylene.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Wagon PHM State Model Based on AHP and Gray Clustering Model Fault Feature Extraction of Compound Planetary Gear Based on VMD and DE Review on Key Technologies of Wireless Monitoring of Pump Group Based on Internet of Things Motion Characteristic Analysis of High Voltage Circuit Breaker Transmission Mechanism Design of the Power Supply System and the PHM Architecture for Unmanned Surface Vehicle
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1