p-MOS可控横向晶闸管:一种适用于集成的MOS可控晶闸管

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting Pub Date : 1995-10-02 DOI:10.1109/BIPOL.1995.493898

W. Chen, G. Amaratunga

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引用次数: 0

摘要

本文提出了一种新型的CMOS兼容侧晶闸管。其晶闸管导通完全由p-MOS栅极控制。由于寄生锁存导致的MOS控制损失已经消除，并在较低的正向电流下触发主晶闸管。通过二维数值模拟和实验制作验证了该器件的运行。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The p-MOS controlled lateral thyristor: A MOS controllable thyristor suitable for integration

A novel CMOS compatible lateral thyristor is proposed in this paper. Its thyristor conduction is fully controlled by a p-MOS gate. Loss of MOS control due to parasitic latch-up has been eliminated and triggering of the main thyristor at lower forward current achieved. The device operation has been verified by 2D numerical simulations and experimental fabrication.

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Proceedings of Bipolar/Bicmos Circuits and Technology Meeting

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