{"title":"一个4.5 W, 26 dB增益的ku波段场效应管功率放大器","authors":"V. Sokolov, R. Bennett","doi":"10.1109/MWSYM.1981.1129844","DOIUrl":null,"url":null,"abstract":"Recent results are presented in the development of multi-stage GaAs FET power amplifiers operating in the 12 to 16 GHz frequency band. Microstrip circuit level power combining is used to achieve 4.5 W output power with 26 dB gain at 13.3 GHz with an efficiency of 15.8%, and a 1 dB bandwidth of 1.7 GHz.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"480 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 4.5 W, 26 dB Gain FET Power Amplifier at Ku-Band\",\"authors\":\"V. Sokolov, R. Bennett\",\"doi\":\"10.1109/MWSYM.1981.1129844\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent results are presented in the development of multi-stage GaAs FET power amplifiers operating in the 12 to 16 GHz frequency band. Microstrip circuit level power combining is used to achieve 4.5 W output power with 26 dB gain at 13.3 GHz with an efficiency of 15.8%, and a 1 dB bandwidth of 1.7 GHz.\",\"PeriodicalId\":120372,\"journal\":{\"name\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"480 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1981.1129844\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1981.1129844","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 4.5 W, 26 dB Gain FET Power Amplifier at Ku-Band
Recent results are presented in the development of multi-stage GaAs FET power amplifiers operating in the 12 to 16 GHz frequency band. Microstrip circuit level power combining is used to achieve 4.5 W output power with 26 dB gain at 13.3 GHz with an efficiency of 15.8%, and a 1 dB bandwidth of 1.7 GHz.