{"title":"压敏离子凝胶效应具有极高的灵敏度,在2v下工作,超过2200 kPa−1","authors":"S. Yamada, Takaaki Sato, H. Toshiyoshi","doi":"10.1109/TRANSDUCERS.2017.7994161","DOIUrl":null,"url":null,"abstract":"Ionic gel is used for the first time on a ZnO field effect transistor (FET) to enhance the gate capacitance due to the electrical double layer, thereby developing an extremely sensitive tactile pressure sensor of 2,200 kPa−1, which is at least 10 times greater than the conventional reports.","PeriodicalId":174774,"journal":{"name":"2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2017-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa−1 operated under 2 V\",\"authors\":\"S. Yamada, Takaaki Sato, H. Toshiyoshi\",\"doi\":\"10.1109/TRANSDUCERS.2017.7994161\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ionic gel is used for the first time on a ZnO field effect transistor (FET) to enhance the gate capacitance due to the electrical double layer, thereby developing an extremely sensitive tactile pressure sensor of 2,200 kPa−1, which is at least 10 times greater than the conventional reports.\",\"PeriodicalId\":174774,\"journal\":{\"name\":\"2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TRANSDUCERS.2017.7994161\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TRANSDUCERS.2017.7994161","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa−1 operated under 2 V
Ionic gel is used for the first time on a ZnO field effect transistor (FET) to enhance the gate capacitance due to the electrical double layer, thereby developing an extremely sensitive tactile pressure sensor of 2,200 kPa−1, which is at least 10 times greater than the conventional reports.