太赫兹半导体异质结构激光器

Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges Pub Date : 2002-05-24 DOI:10.1109/CLEO.2002.1034500

R. Kohler, A. Tredicucci, F. Beltram, H. Beere, E. Linfield, A. Davies, D. Ritchie, R. Iotti, F. Rossi

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引用次数: 139

摘要

基于GaAs/AlGaAs异质结构的微带间跃迁的注入激光器在太赫兹范围内工作。在4.4THz下实现单模发射，输出功率为2.5mW，阈值为几百A/cm/sup 2/，最高可达50K。

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Terahertz semiconductor-heterostructure lasers

Injection lasers based on interminiband transitions in GaAs/AlGaAs heterostructures are operated in the THz range. Single-mode emission is achieved at 4.4THz, with output powers of 2.5mW and thresholds of few hundred A/cm/sup 2/ up to 50K.

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Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges

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