3毫米深微电极针阵列基于铝神经应用

A. C. Peixoto, S. B. Goncalves, A. F. Silva, N. Dias, J. Correia
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引用次数: 1

摘要

本文提出了一种简单而经济的基于铝的侵入性神经微电极阵列的制造方法,这是一种可行的替代其他主要依赖于硅的最新技术。制作了一个10 × 10阵列,每个阵列具有3.0 mm的深达柱,每个柱具有锥体尖端轮廓。每个铝柱都用一层生物相容的氧化铝绝缘。电极尖端通过脉冲溅射覆盖一层氧化铱薄膜层,为记录/刺激目的提供稳定和可逆的行为,在广泛的频率范围内(10 Hz-100 kHz)具有145欧姆的阻抗。每根柱子都通过环氧树脂绝缘层与相邻的柱子隔开。高纵横比柱(20:1)是通过切割、薄膜沉积、阳极氧化和湿法蚀刻的组合来实现的。与以前的工作相比,所描述的方法允许更深穿透电极阵列和更简单的制造过程。
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3 mm Deep microelectrode needle array based on aluminum for neural applications
This paper presents a simple and cost-effective fabrication method of invasive neural microelectrode arrays based on aluminum, which is a viable alternative to other state-of-the-art technologies that rely primarily on silicon. A 10 × 10 array with 3.0 mm deep reaching pillars were fabricated, each having a pyramidal tip profile. Each aluminum pillar is insulated with a biocompatible layer of aluminum oxide. The electrode tip was covered by an iridium oxide thin-film layer via pulsed sputtering, providing a stable and a reversible behavior for recording/stimulation purposes, each with a 145 Ohm impedance in a wide frequency range of interest (10 Hz-100 kHz). Each pillar is electrically individualized from the adjacent ones by an insulating layer of epoxy resin. High-aspect-ratio pillars (20:1) are achieved through a combination of dicing, thin-film deposition, anodizing and wet-etching. The described approach allows an array of deeper penetrating electrodes and a simpler fabrication procedure when compared to previous works.
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