2.75 GHz低噪声0.35µm CMOS跨阻放大器

18th Mediterranean Conference on Control and Automation, MED'10 Pub Date : 2010-06-23 DOI:10.1109/MED.2010.5547749

E. Hammoudi, A. Mokhtar

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引用次数: 7

摘要

采用0.35µm CMOS技术实现了2.75 GHz的低噪声高带宽跨阻放大器(TIA)。设计的放大器配置在使用有源负载的三个相同的级上。该结构工作在3.3V电源电压下，跨阻增益为531 Ω，增益带宽积(GBW)为1.46 THz×Ω，低噪声水平约为12.8 pA/√Hz，光电二极管电容为0.4 pF。利用0.35µm CMOS AMS参数的仿真工具验证了预测的性能。

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2.75 GHz low noise 0.35 µm CMOS transimpedance amplifier

A low-noise and high-bandwidth Transimpedance Amplifier (TIA) at 2.75 GHz has been implemented in 0.35 µm CMOS technology. The designed amplifier is configured on three identical stages that use an active load. This structure operates at 3.3V power supply voltage, displays a transimpedance gain of 531 Ω, exhibits a gain bandwidth product (GBW) of 1.46 THz×Ω and a low-noise level of about 12.8 pA/√Hz , while operating with a photodiode capacitance of 0.4 pF. The predicted performance is verified using simulations tools with 0.35 µm CMOS AMS parameters.

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18th Mediterranean Conference on Control and Automation, MED'10

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