超薄缓冲层硅上Ge/SiGe量子阱堆叠的高对比度量子受限Stark效应

2018 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) Pub Date : 2018-07-29 DOI:10.1364/CLEOPR.2018.TH3C.1

S. Srinivasan, C. Perret, E. Vissers, Pieter Geiregat, D. Thourhout, R. Loo, M. Pantouvaki, J. Campenhout

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引用次数: 2

摘要

利用超薄缓冲层在硅上生长的Ge/GeSi量子阱堆叠中，证明了在1V振荡下具有创纪录的2.5吸收对比度的量子受限Stark效应，目标是未来集成在硅光子平台中。

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High-Contrast Quantum-Confined Stark Effect in Ge/SiGe Quantum Well Stacks on Si with Ultra-Thin Buffer Layers

Quantum-confined Stark effect with a record absorption contrast of 2.5 for 1V swing is demonstrated in Ge/GeSi quantum well stacks grown on Si using ultra-thin buffer layers, targeting future integration in a silicon photonics platform.

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2018 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)

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