防止光导太赫兹发射极在高偏置场下击穿

2021 Conference on Lasers and Electro-Optics (CLEO) Pub Date : 2021-05-01 DOI:10.1364/cleo_at.2021.jtu3a.164

M. Welsch, Abhishek Singh, S. Winnerl, A. Pashkin, Ming Xu, Mengxia Li, M. Helm, H. Schneider

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引用次数: 0

摘要

通过增大工作偏置场和防止击穿来提高光导太赫兹发射器的效率。通过在发射极上串联外部电阻，可以施加~ 120kv /cm的偏置场。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Preventing the breakdown of photoconductive terahertz emitter at high bias-field operation

The efficiency of photoconductive terahertz emitters is improved by increasing the operating bias field and preventing the breakdown. We can apply ~ 120 kV/cm bias field by using external resistances in series to the emitter.

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2021 Conference on Lasers and Electro-Optics (CLEO)

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