喷雾热解法制备Al掺杂Zno薄膜的电学和光学性质

S. Shrestha, Pradeep Basnet
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引用次数: 3

摘要

以脱水乙酸锌(CH3COOH)水溶液为原料,采用喷雾热解技术制备了氧化锌和铝掺杂氧化锌(AZO)透明导电薄膜。2H2O,纯默克A. r级)和六水合物氯化铝(AlCl3 .6 h2o)在微玻片上。发现所制备的薄膜对衬底具有高度粘附性并具有均匀导电性。研究了不同起始溶液中Al浓度和不同衬底温度下薄膜的光学和电学性能。电阻率测量采用范德保形四探针法。观察到铝掺杂膜的电阻率随掺杂浓度的变化而变化。在掺杂2 at % [Al/Zn]的薄膜中观察到最低的电阻率。霍尔系数测量结果表明,ZnO和AZO均表现为n型导电。在Al掺杂率为2%时,载流子浓度最高。所有铝浓度样品的光学测量结果都大于85%,表明该薄膜具有高透明度。随着Al浓度的增加,光学带隙从3.27 eV增加到3.41 eV。
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Electrical and optical properties of Al doped Zno film prepared by spray pyrolysis technique
Transparent conducting thin films of zinc oxides and aluminum doped zinc oxide (AZO) were prepared by the spray pyrolysis technique using an aqueous solution of dehydrate zinc acetate (CH3COOH. 2H2O, pure- Merck A. R. grade) and hex hydrate aluminum chloride (AlCl3 .6H2O) on the micro glass slides. The prepared thin films are found to be highly adherent to the substrate and possess uniform conduction. The optical and electrical properties of the film were investigated in terms of different Al concentration in the starting solution and different substrate temperature. Four probe method in Van der pauw configuration was used for electrical resistivity measurements. The resistivity of Al doped film is observed to vary with doping concentration. The lowest resistivity is observed in the film doping with 2 at % [Al/Zn]. The Hall coefficient measurements show that both ZnO and AZO show the n-type conduction. The carrier concentration was observed to be highest at 2 at% of Al doping. The optical measurements of all the samples with aluminum concentrations was found to be >85 % showing the film to be highly transparent in nature. With increase in Al concentration, the optical band gap was observed increase from 3.27 eV to 3.41 eV.
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