Y. Aoki, S. Honda, T. Wakamatsu, Z. Kato, F. Kaneko
{"title":"ATR法评价TCNQ LB膜对铝薄膜的影响","authors":"Y. Aoki, S. Honda, T. Wakamatsu, Z. Kato, F. Kaneko","doi":"10.1109/ISEIM.1995.496576","DOIUrl":null,"url":null,"abstract":"The attenuated total reflection (ATR) properties were measured for C/sub 15/TCNQ Langmuir-Blodgett (LB) ultrathin films on Al thin films deposited using two types of processes. The dielectric constants were theoretically calculated from the ATR curves. It was estimated that Z-type LB films were well deposited in the first process. On the contrary, in the second process, it was estimated that the LB films were not perfectly deposited as Y-type, but partially as Z-type.","PeriodicalId":130178,"journal":{"name":"Proceedings of 1995 International Symposium on Electrical Insulating Materials","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evaluation of TCNQ LB films on aluminum thin films by ATR measurement\",\"authors\":\"Y. Aoki, S. Honda, T. Wakamatsu, Z. Kato, F. Kaneko\",\"doi\":\"10.1109/ISEIM.1995.496576\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The attenuated total reflection (ATR) properties were measured for C/sub 15/TCNQ Langmuir-Blodgett (LB) ultrathin films on Al thin films deposited using two types of processes. The dielectric constants were theoretically calculated from the ATR curves. It was estimated that Z-type LB films were well deposited in the first process. On the contrary, in the second process, it was estimated that the LB films were not perfectly deposited as Y-type, but partially as Z-type.\",\"PeriodicalId\":130178,\"journal\":{\"name\":\"Proceedings of 1995 International Symposium on Electrical Insulating Materials\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1995 International Symposium on Electrical Insulating Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISEIM.1995.496576\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1995 International Symposium on Electrical Insulating Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEIM.1995.496576","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of TCNQ LB films on aluminum thin films by ATR measurement
The attenuated total reflection (ATR) properties were measured for C/sub 15/TCNQ Langmuir-Blodgett (LB) ultrathin films on Al thin films deposited using two types of processes. The dielectric constants were theoretically calculated from the ATR curves. It was estimated that Z-type LB films were well deposited in the first process. On the contrary, in the second process, it was estimated that the LB films were not perfectly deposited as Y-type, but partially as Z-type.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
