主题演讲2:面向后摩尔时代的太赫兹电子学和性能增强

H. Nosaka
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引用次数: 0

摘要

由于毫米波和太赫兹波段具有类似光的宽带和穿透能力,预计将用于超高速无线和光传输、传感、成像和其他高频应用。本课题介绍了基于InP HEMT技术的300 ghz波段无线通信ic和基于InP HBT技术的100 gbit /s以上光通信ic。讲座的最后将介绍一种新的性能增强方法,该方法结合了硅CMOS lsi和后摩尔时代的高速化合物半导体ic。
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Keynote speech 2: Terahertz electronics and performance enhancement towards the Post-Moore Era
Millimeter-wave and terahertz bands are expected to be used for ultra-high-speed wireless and optical transmission, sensing, imaging, and other high frequency applications because of their light-like broad band and penetration ability. This task introduces 300-GHz-band wireless communication ICs in InP HEMT technology and over 100-Gbit/s optical communication ICs in InP HBT technology. The talk will conclude with a presentation of a new performance enhancement approach combining silicon CMOS LSIs and high-speed compound semiconductor ICs for the post-Moore era.
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On-chip circuit miniaturization techniques for millimeter-wave bandpass filter design A 38GHz 27dBm power amplifier in enhancement mode GaAs PHEMT technology Millimeter wave antenna array based on dielectric-filled waveguides Studies on applicability of reverse offset in printing millimeter-wave antennas on flexible substrates Compact, omni-directional, circularly-polarized mm-Wave antenna for device-to-device (D2D) communications in future 5G cellular systems
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