{"title":"主题演讲2:面向后摩尔时代的太赫兹电子学和性能增强","authors":"H. Nosaka","doi":"10.1109/GSMM.2017.7970288","DOIUrl":null,"url":null,"abstract":"Millimeter-wave and terahertz bands are expected to be used for ultra-high-speed wireless and optical transmission, sensing, imaging, and other high frequency applications because of their light-like broad band and penetration ability. This task introduces 300-GHz-band wireless communication ICs in InP HEMT technology and over 100-Gbit/s optical communication ICs in InP HBT technology. The talk will conclude with a presentation of a new performance enhancement approach combining silicon CMOS LSIs and high-speed compound semiconductor ICs for the post-Moore era.","PeriodicalId":414423,"journal":{"name":"2017 10th Global Symposium on Millimeter-Waves","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Keynote speech 2: Terahertz electronics and performance enhancement towards the Post-Moore Era\",\"authors\":\"H. Nosaka\",\"doi\":\"10.1109/GSMM.2017.7970288\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Millimeter-wave and terahertz bands are expected to be used for ultra-high-speed wireless and optical transmission, sensing, imaging, and other high frequency applications because of their light-like broad band and penetration ability. This task introduces 300-GHz-band wireless communication ICs in InP HEMT technology and over 100-Gbit/s optical communication ICs in InP HBT technology. The talk will conclude with a presentation of a new performance enhancement approach combining silicon CMOS LSIs and high-speed compound semiconductor ICs for the post-Moore era.\",\"PeriodicalId\":414423,\"journal\":{\"name\":\"2017 10th Global Symposium on Millimeter-Waves\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 10th Global Symposium on Millimeter-Waves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GSMM.2017.7970288\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 10th Global Symposium on Millimeter-Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GSMM.2017.7970288","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Keynote speech 2: Terahertz electronics and performance enhancement towards the Post-Moore Era
Millimeter-wave and terahertz bands are expected to be used for ultra-high-speed wireless and optical transmission, sensing, imaging, and other high frequency applications because of their light-like broad band and penetration ability. This task introduces 300-GHz-band wireless communication ICs in InP HEMT technology and over 100-Gbit/s optical communication ICs in InP HBT technology. The talk will conclude with a presentation of a new performance enhancement approach combining silicon CMOS LSIs and high-speed compound semiconductor ICs for the post-Moore era.