M. Stepovich, D. Turtin, E. Seregina, V. Kalmanovich
{"title":"直接间隙半导体飞行时间阴极发光数学模型的正确性","authors":"M. Stepovich, D. Turtin, E. Seregina, V. Kalmanovich","doi":"10.1051/itmconf/20193007014","DOIUrl":null,"url":null,"abstract":"Two-dimensional and three-dimensional mathematical models of diffusion and cathodoluminescence of excitons in single-crystal gallium nitride excited by a pulsating sharply focused electron beam in a homogeneous semiconductor material are compared. The correctness of these models has been carried out, estimates have been obtained to evaluate the effect of errors in the initial data on the distribution of the diffusing excitons and the cathodoluminescence intensity.","PeriodicalId":433898,"journal":{"name":"ITM Web of Conferences","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"On the correctness of mathematical models of time-of-flight cathodoluminescence of direct-gap semiconductors\",\"authors\":\"M. Stepovich, D. Turtin, E. Seregina, V. Kalmanovich\",\"doi\":\"10.1051/itmconf/20193007014\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two-dimensional and three-dimensional mathematical models of diffusion and cathodoluminescence of excitons in single-crystal gallium nitride excited by a pulsating sharply focused electron beam in a homogeneous semiconductor material are compared. The correctness of these models has been carried out, estimates have been obtained to evaluate the effect of errors in the initial data on the distribution of the diffusing excitons and the cathodoluminescence intensity.\",\"PeriodicalId\":433898,\"journal\":{\"name\":\"ITM Web of Conferences\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ITM Web of Conferences\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1051/itmconf/20193007014\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ITM Web of Conferences","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/itmconf/20193007014","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the correctness of mathematical models of time-of-flight cathodoluminescence of direct-gap semiconductors
Two-dimensional and three-dimensional mathematical models of diffusion and cathodoluminescence of excitons in single-crystal gallium nitride excited by a pulsating sharply focused electron beam in a homogeneous semiconductor material are compared. The correctness of these models has been carried out, estimates have been obtained to evaluate the effect of errors in the initial data on the distribution of the diffusing excitons and the cathodoluminescence intensity.
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