高速MCM电路中的信号传播

C. Truzzi, E. Beyne, E. Ringoot, J. Peeters
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引用次数: 5

摘要

本文分析了数字信号在装有CMOS集成电路的薄膜多芯片模块(MCM)衬底上的传播。在设计MCM时进行了时序分析和电路仿真,该MCM由4个0.7-/spl μ m CMOS ASIC(100引脚,64 mm/sup /,标准单元技术)组成,在5层薄膜衬底(1 × 1英寸,2个互连层)上以200 Mbit/s的速度传输信号。本文主要解决与微系统设计相关的两个问题,其中必须在高频和高密度要求之间找到权衡:1)准确描述芯片到芯片的信号传播,包括有源设备(驱动器和接收器)和耦合的有损耗互连线的综合影响;2)准确概述来自不同领域(几何、电气和技术)的参数相互作用并共同影响信号传播的方式。它显示了这种分析的结果如何帮助解决不同需求之间的权衡,并在系统设计阶段做出决策。
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Signal propagation in high-speed MCM circuits
This paper describes the analysis of the propagation of digital signal on a thin-film multichip module (MCM) substrate populated with CMOS integrated circuits. Timing analyses and circuit simulations were performed during the design of an MCM consisting of 4 bare 0.7-/spl mu/m CMOS ASIC's (100 pins, 64 mm/sup 2/, standard cell technology) transmitting signals at 200 Mbit/s on a 5-layer thin-film substrate (1-by-1 inch, 2 interconnection layers). This paper addresses mainly two problems related to the design of microsystems where trade-offs must be found between high frequency and high density requirements: 1) an accurate description of the chip-to-chip, propagation of the signals, including the combined influence of active devices (drivers and receivers) and coupled, lossy interconnection lines: 2) an accurate overview of the way parameters from different domains (geometrical, electrical and technological) interact with each other and affect together the signal propagation. It is shown how the results of such analyses can help solving trade-offs between different requirements and taking decisions during the system design phase.
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