采用新型降压升压拓扑和两个低侧mosfet的非隔离型650W DC-DC变换器

Karamat Adavi, Christian Kessler, R. Ruf
{"title":"采用新型降压升压拓扑和两个低侧mosfet的非隔离型650W DC-DC变换器","authors":"Karamat Adavi, Christian Kessler, R. Ruf","doi":"10.1109/SPEC52827.2021.9709469","DOIUrl":null,"url":null,"abstract":"This article presents a non-isolated 650W DC-DC converter with an input voltage range of 150V until 700V. A novel buck-boost topology with two low-side MOSFETs was designed by combining the classical buck topology and boost topology. This novel topology configuration has an advantage in selecting gate driver integrated circuit (IC), since the IC does not need to provide high-side gate signals. To control gate signals of the two low-side MOSFETs, a new analog control circuitry was proposed and implemented. A 290V output voltage and 650W output power prototype were fabricated to evaluate the effectiveness of the proposed converter. The measurements are validated a peak efficiency of 98.11% in boost mode and 97.45% in buck mode at a switching frequency of 100kHz.","PeriodicalId":236251,"journal":{"name":"2021 IEEE Southern Power Electronics Conference (SPEC)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A non-isolated 650W DC-DC converter using a novel buck-boost topology with two low-side MOSFETs\",\"authors\":\"Karamat Adavi, Christian Kessler, R. Ruf\",\"doi\":\"10.1109/SPEC52827.2021.9709469\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article presents a non-isolated 650W DC-DC converter with an input voltage range of 150V until 700V. A novel buck-boost topology with two low-side MOSFETs was designed by combining the classical buck topology and boost topology. This novel topology configuration has an advantage in selecting gate driver integrated circuit (IC), since the IC does not need to provide high-side gate signals. To control gate signals of the two low-side MOSFETs, a new analog control circuitry was proposed and implemented. A 290V output voltage and 650W output power prototype were fabricated to evaluate the effectiveness of the proposed converter. The measurements are validated a peak efficiency of 98.11% in boost mode and 97.45% in buck mode at a switching frequency of 100kHz.\",\"PeriodicalId\":236251,\"journal\":{\"name\":\"2021 IEEE Southern Power Electronics Conference (SPEC)\",\"volume\":\"68 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE Southern Power Electronics Conference (SPEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SPEC52827.2021.9709469\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE Southern Power Electronics Conference (SPEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SPEC52827.2021.9709469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文介绍了一种输入电压范围为150V至700V的非隔离型650W DC-DC变换器。将经典降压拓扑与升压拓扑相结合,设计了一种具有两个低侧mosfet的新型降压-升压拓扑。这种新颖的拓扑结构在选择栅极驱动集成电路(IC)时具有优势,因为IC不需要提供高侧栅极信号。为了控制两个低侧mosfet的门信号,提出并实现了一种新的模拟控制电路。制作了输出电压为290V、输出功率为650W的样机,对该变换器的有效性进行了评价。在开关频率为100kHz时,测量结果验证了升压模式和降压模式下的峰值效率分别为98.11%和97.45%。
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A non-isolated 650W DC-DC converter using a novel buck-boost topology with two low-side MOSFETs
This article presents a non-isolated 650W DC-DC converter with an input voltage range of 150V until 700V. A novel buck-boost topology with two low-side MOSFETs was designed by combining the classical buck topology and boost topology. This novel topology configuration has an advantage in selecting gate driver integrated circuit (IC), since the IC does not need to provide high-side gate signals. To control gate signals of the two low-side MOSFETs, a new analog control circuitry was proposed and implemented. A 290V output voltage and 650W output power prototype were fabricated to evaluate the effectiveness of the proposed converter. The measurements are validated a peak efficiency of 98.11% in boost mode and 97.45% in buck mode at a switching frequency of 100kHz.
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