甘恩二极管:基本原理和制造

Proceedings of the 1998 South African Symposium on Communications and Signal Processing-COMSIG '98 (Cat. No. 98EX214) Pub Date : 1998-09-07 DOI:10.1109/COMSIG.1998.736992

R. van Zyl, W. Perold, R. Botha

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引用次数: 10

摘要

一个简短的教程，对Gunn二极管提出。简要讨论了冈恩振荡的基本原理，并通过相关的仿真加以说明。本文还对典型的甘恩二极管在腔内的模拟进行了讨论。最后，讨论了低功率Gunn二极管的制备工艺。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Gunn-diode: fundamentals and fabrication

A short tutorial on the Gunn diode is presented. The principles underlying Gunn oscillations are discussed briefly and illustrated by relevant simulations. The simulation of a typical Gunn diode in a cavity is also presented. In conclusion, the fabrication process of low-power Gunn diodes is discussed.

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Proceedings of the 1998 South African Symposium on Communications and Signal Processing-COMSIG '98 (Cat. No. 98EX214)

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