{"title":"高效率氮化镓HEMT e波段功率放大器，输出功率1.8W","authors":"Peng Xu, Zhiqun Cheng, Zhiwei Zhang, MingWen Meng","doi":"10.1109/ICICM50929.2020.9292182","DOIUrl":null,"url":null,"abstract":"This paper presented a four-stage E-band power amplifier monolithic microwave integrated circuits(MMIC) based on GaN high-electron-mobility transistor(HEMT) with 60nm of gate length. The layout of the proposed circuit shows that the small-signal gain of 21–23dB and power added efficiency(PAE) of 25.5%–27.5% in the E-band low frequency (71–76GHz). The saturated output power of greater than 32.6dBm(1.8W) is achieved with the power gain of more than 12.6 dB and the linear power gain of more than 20dB. The power density of around 1.4W/mm is achieved at the final stage.","PeriodicalId":364285,"journal":{"name":"2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High Efficiency GaN HEMT E-Band Power Amplifier MMIC with 1.8W Output Power\",\"authors\":\"Peng Xu, Zhiqun Cheng, Zhiwei Zhang, MingWen Meng\",\"doi\":\"10.1109/ICICM50929.2020.9292182\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presented a four-stage E-band power amplifier monolithic microwave integrated circuits(MMIC) based on GaN high-electron-mobility transistor(HEMT) with 60nm of gate length. The layout of the proposed circuit shows that the small-signal gain of 21–23dB and power added efficiency(PAE) of 25.5%–27.5% in the E-band low frequency (71–76GHz). The saturated output power of greater than 32.6dBm(1.8W) is achieved with the power gain of more than 12.6 dB and the linear power gain of more than 20dB. The power density of around 1.4W/mm is achieved at the final stage.\",\"PeriodicalId\":364285,\"journal\":{\"name\":\"2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICM50929.2020.9292182\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICM50929.2020.9292182","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Efficiency GaN HEMT E-Band Power Amplifier MMIC with 1.8W Output Power
This paper presented a four-stage E-band power amplifier monolithic microwave integrated circuits(MMIC) based on GaN high-electron-mobility transistor(HEMT) with 60nm of gate length. The layout of the proposed circuit shows that the small-signal gain of 21–23dB and power added efficiency(PAE) of 25.5%–27.5% in the E-band low frequency (71–76GHz). The saturated output power of greater than 32.6dBm(1.8W) is achieved with the power gain of more than 12.6 dB and the linear power gain of more than 20dB. The power density of around 1.4W/mm is achieved at the final stage.
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