Analytical Modeling and Design Optimization of Dual Gated n-channel Graphene MOSFET

This paper presents a dual gated n-channel graphene metal-oxide-semiconductor field-effect transistor (MOSFET) with a gapless large-area graphene channel. The semiclassical ballistic model is used in Comsol V5.6 software to calculate the DC characteristics, quantum capacitance, and cut-off frequency for this proposed design. For dual gate formation, SiO2 is used as back gate oxide and HfO2 layer is used as top gate oxide. This proposed Graphene MOSFET is easy to realize and can be easily fabricated by using the recent fabrication technique. The analytical approach shows, Graphene offers less threshold voltage, larger current capability, very little gate capacitance and is having a better cut-off frequency. The excellent characteristics will make the proposed Graphene MOSFET an excellent candidate in future high-speed analog electronic circuits applications.