在亚阈值设计中使用数据路径可调缓冲器的后硅保持时间封闭技术

Divya Akella, Xinfei Guo, H. Patel, M. Stan, B. Calhoun
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摘要

本文提出了一种后硅保持时间关闭技术,用于性能宽松的亚阈值数字设计,在保持关键数据路径中使用可调缓冲器插入。在基于触发器的数字电路中,保持时间关闭是非常关键的,因为保持故障不能在制造后纠正。这种临界性在亚阈值域中增加,这对工艺、电压和温度变化高度敏感。设计时保持余量可以实现跨变量的稳定保持时间关闭。然而,不足的保留空间可能导致芯片故障,过高的保留空间会带来额外的面积和功耗成本。在本文中,我们提出了一种后硅保持时间闭包方法,该方法在数据路径中引入了可调缓冲区。这使得保持偏差的硅后校正成为可能,因此减少了估计设计时保持余量的设计工作量。我们设计了一个可调缓冲器,演示了可调缓冲器插入策略,并使用标准的EDA工具给出了一个物理设计流程。我们通过130 nm测试芯片的测量来验证该技术。与传统的缓冲技术相比,基于设计的保持松弛度提高了103%-195%,功耗和面积开销最小。这种技术也有可能减少为保持关闭而插入的缓冲区的数量。
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A post-silicon hold time closure technique using data-path tunable-buffers for variation-tolerance in sub-threshold designs
This paper presents a post-silicon hold time closure technique for performance-relaxed, sub-threshold digital designs using tunable-buffer insertion in hold-critical data-paths. Hold time closure in flip-flop based digital circuits is highly critical because hold failures cannot be corrected post-fabrication. This criticality increases in the sub-threshold domain, which is highly sensitive to process, voltage, and temperature variations. Design-time hold margins enable robust hold time closure across variations. However, insufficient hold margins can lead to chip failures and overestimated hold margins introduce additional costs in area and power. In this paper, we propose a post-silicon hold time closure methodology that introduces tunable-buffers in the data-path. This enables post-silicon correction of hold violations and therefore, reduces the design effort in estimating design-time hold margins. We design a tunable-buffer, demonstrate the tunable-buffer insertion strategy, and present a physical design flow using standard EDA tools. We verify this technique with measurements of a 130 nm test chip. A design-dependent hold slack improvement in the range of 103%–195% is achieved compared to the traditional buffering technique, with minimal power and area overhead. This technique also has the potential to reduce the number of buffers inserted for hold closure.
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