多晶锗锡薄膜的激光烧结

2021 IEEE 17th International Conference on Group IV Photonics (GFP) Pub Date : 2021-12-01 DOI:10.1109/GFP51802.2021.9673991

Md. Toriqul Islam, M. Gupta

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引用次数: 0

摘要

研究了在硅衬底上沉积3µm厚GeSn薄膜的激光烧结工艺。在锗中加入2%锡以提高p型迁移率。高空穴迁移率为166.2 cm2/v。激光烧结的多晶GeSn薄膜得到了s。

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Laser sintering of polycrystalline Ge-Sn films

A laser sintering fabrication process to deposit 3 µm thick GeSn films on silicon substrates has been demonstrated. A 2% tin was incorporated in germanium to increase p-type mobility. High hole mobility of 166.2 cm2/v.s was achieved for laser-sintered polycrystalline GeSn films.

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2021 IEEE 17th International Conference on Group IV Photonics (GFP)

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