{"title":"采用低成本、高体积的0.15 um光刻pHEMT工艺的40ghz功率放大器","authors":"Kenneth W. Mays","doi":"10.1109/COMCAS.2009.5385967","DOIUrl":null,"url":null,"abstract":"A 40 GHz power amplifier is realized with a new 0.15 um optical lithography pHEMT process developed for low-cost microwave and millimeter wave circuits. Several Ka and V Band market requirements have driven demand for higher bandwidth, low-cost, integrated circuits. A 40 GHz power amplifier is used to demonstrate the process capabilities, starting from the initial design phase and culminating with the fabrication and measurement of the solid state power amplifier.","PeriodicalId":372928,"journal":{"name":"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems","volume":"461 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 40 GHz power amplifier using a low cost high volume 0.15 um optical lithography pHEMT process\",\"authors\":\"Kenneth W. Mays\",\"doi\":\"10.1109/COMCAS.2009.5385967\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 40 GHz power amplifier is realized with a new 0.15 um optical lithography pHEMT process developed for low-cost microwave and millimeter wave circuits. Several Ka and V Band market requirements have driven demand for higher bandwidth, low-cost, integrated circuits. A 40 GHz power amplifier is used to demonstrate the process capabilities, starting from the initial design phase and culminating with the fabrication and measurement of the solid state power amplifier.\",\"PeriodicalId\":372928,\"journal\":{\"name\":\"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems\",\"volume\":\"461 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMCAS.2009.5385967\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMCAS.2009.5385967","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 40 GHz power amplifier using a low cost high volume 0.15 um optical lithography pHEMT process
A 40 GHz power amplifier is realized with a new 0.15 um optical lithography pHEMT process developed for low-cost microwave and millimeter wave circuits. Several Ka and V Band market requirements have driven demand for higher bandwidth, low-cost, integrated circuits. A 40 GHz power amplifier is used to demonstrate the process capabilities, starting from the initial design phase and culminating with the fabrication and measurement of the solid state power amplifier.
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