三维SiC/Si mosfet的临界电场和自加热

2015 IEEE International Conference on Electro/Information Technology (EIT) Pub Date : 2015-05-21 DOI:10.1109/EIT.2015.7293417

Vamshi Veesam, Ramana Thakkallapally, I. Abdel-Motaleb, Zheng Shen

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摘要

本文研究了三维3C-SiC/Si mosfet的电场和自热温度。利用数值分析模拟器Silvaco Atlas，发现该器件在击穿电压接近312V时具有6.68×106 V/cm的临界电场。利用COMSOL程序对自热效应进行了研究，发现在VDS=312V和VGS=5V时，自热效应达到866K。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Critical electric field and self-heating in 3D SiC/Si MOSFETs

In this paper we evaluated the electric field and self-heating temperature of 3D 3C-SiC/Si MOSFETs. Using the numerical analysis simulator Silvaco Atlas, this device was found to have a critical electric field of 6.68×106 V/cm at a breakdown voltage close to 312V. Using COMSOL program, self-heating effect was investigated, and found that the temperature reached 866K at VDS=312V and VGS=5V.

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2015 IEEE International Conference on Electro/Information Technology (EIT)

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