非晶硫化物的亚带隙光全息记录

A. Ozols, D. Saharov
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引用次数: 2

摘要

基于a-As2S3薄膜的实验和文献资料,研究了全息图的亚带隙光记录(SBLR)。实验研究了聚焦(光强I = 14 ~ 124 W/cm2)和非聚焦(光强I = 0.50 ~ 0.78 W/cm2) 632.8 nm He-Ne激光亚带隙光在非退火和退火a-As2S3薄膜中的全息光栅记录。聚焦光记录的衍射效率为14.9%,比记录能量为216 J/(cm2%),远高于未聚焦光记录的0.11% (72400 J/(cm2%))。其他一些属性也有所不同。聚焦光记录的解释是光热刺激的弛豫结构变化(RSC)伴随着光诱导的d中心的产生和充电。光记录的不聚焦可以用d中心的光取向来解释,RSC也有一定的贡献。研究了除a-As2S3薄膜外材料的SBLR,认为非晶硫化物和硒化物是最好的SBLR记录材料。SBLR是有利的,因为它的体积性质,使生产均匀全息光学体元件和器件。
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Sub-bandgap light hologram recording in amorphous chalcogenides
Sub-bandgap light recording (SBLR) of holograms is studied basing on the experiments in a-As2S3 films and literature data. Holographic grating recording with focused (light intensity I = 14 - 124 W/cm2 ) and unfocused (I = 0.50 - 0.78 W/cm2) 632.8 nm He-Ne laser sub-bandgap light in non-annealed and annealed a-As2S3 films has been experimentally studied. The focused light recording is found to be much more efficient (diffraction efficiency up to 14.9%, specific recording energy down to 216 J/(cm2%)) than the unfocused light recording (0.11%, 72400 J/(cm2%)). Some other properties are also different. The focused light recording is explained by the photothermally stimulated relaxational structural changes (RSC) accompanied by the photoinduced generation and recharging of D-centers. The unfocused light recording is explained by the photorientation of D-centers with some contribution of RSC . SBLR in materials other than a-As2S3 films was considered and the conclusion was made that amorphous sulfides and selenides are expected to be the best SBLR recording materials. SBLR is advantageous because of its bulk nature enabling the production of homogeneous holographic optical volume elements and devices.
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