{"title":"利用IEGT开发2/sup / generation SVCS","authors":"Masayuki Tobita, Takeo Kanai, Teruo Yoshino","doi":"10.1109/PCC.2002.998128","DOIUrl":null,"url":null,"abstract":"A new semiconductor power device, IEGT (injection enhanced gate transistor) has been developed by TOSHIBA Semiconductor Company. It is a metal oxide gate semiconductor device and offers advantages compared with the conventional GTO device, the smaller gate power and the higher turn-on and turn-off capability. A converter using the IEGT has been successfully developed. It will be used in static VAr compensators etc. This paper describes the design, test results and advantages of the developed 21 MVA static VAr compensator using IEGT compared with the GTO converter.","PeriodicalId":320424,"journal":{"name":"Proceedings of the Power Conversion Conference-Osaka 2002 (Cat. No.02TH8579)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Development of the 2/sup nd/ generation SVCS using IEGT\",\"authors\":\"Masayuki Tobita, Takeo Kanai, Teruo Yoshino\",\"doi\":\"10.1109/PCC.2002.998128\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new semiconductor power device, IEGT (injection enhanced gate transistor) has been developed by TOSHIBA Semiconductor Company. It is a metal oxide gate semiconductor device and offers advantages compared with the conventional GTO device, the smaller gate power and the higher turn-on and turn-off capability. A converter using the IEGT has been successfully developed. It will be used in static VAr compensators etc. This paper describes the design, test results and advantages of the developed 21 MVA static VAr compensator using IEGT compared with the GTO converter.\",\"PeriodicalId\":320424,\"journal\":{\"name\":\"Proceedings of the Power Conversion Conference-Osaka 2002 (Cat. No.02TH8579)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Power Conversion Conference-Osaka 2002 (Cat. No.02TH8579)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PCC.2002.998128\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Power Conversion Conference-Osaka 2002 (Cat. No.02TH8579)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PCC.2002.998128","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Development of the 2/sup nd/ generation SVCS using IEGT
A new semiconductor power device, IEGT (injection enhanced gate transistor) has been developed by TOSHIBA Semiconductor Company. It is a metal oxide gate semiconductor device and offers advantages compared with the conventional GTO device, the smaller gate power and the higher turn-on and turn-off capability. A converter using the IEGT has been successfully developed. It will be used in static VAr compensators etc. This paper describes the design, test results and advantages of the developed 21 MVA static VAr compensator using IEGT compared with the GTO converter.
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